SH8KA7GZETB

Specifications

Yayın Yılı

2016

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

30A

Transistor Application

SWITCHING

Yüzey Montaj

YES

Power Max

2W Ta

Avalanche Energy Rating Eas

65.1 mJ

Fabrika Tedarik Süresi

16 Weeks

Fet Type

2 N-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0093Ohm

Gate Charge Qg Max Vgs

81nC @ 10V

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Drain To Source Voltage Vdss

30V

Input Capacitance Ciss Max Vds

3320pF @ 15V

Current Continuous Drain Id25

15A Ta

Fet Feature

Standard

Rds On Max Id Vgs

9.3m Ω @ 15A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Parça Durumu

Active

Jesd30 Code

R-PDSO-G8

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Vgsth Max Id

2.5V @ 1mA