SH8KA4TB

Specifications

Drain To Source Voltage Vdss

30V

Terminal Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

15.5nC @ 10V

Drainsource On Resistancemax

21.4Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

2 N-Channel (Dual)

Drain Currentmax Abs Id

9A

REACH Uyumluluk Kodu

not_compliant

Fabrika Tedarik Süresi

20 Weeks

Avalanche Energy Rating Eas

4.6 mJ

Yüzey Montaj

YES

Power Max

3W

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

18A

Vgsth Max Id

2.5V @ 1mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Number Of Elements

2

Jesd30 Code

R-PDSO-G8

Transistor Element Material

SILICON

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Rds On Max Id Vgs

21.4m Ω @ 9A, 10V

Current Continuous Drain Id25

9A

Input Capacitance Ciss Max Vds

640pF @ 15V