Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 30V
- Terminal Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Cut Tape (CT)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 15.5nC @ 10V
- Drainsource On Resistancemax
- 21.4Ohm
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Type
- 2 N-Channel (Dual)
- Drain Currentmax Abs Id
- 9A
- REACH Uyumluluk Kodu
- not_compliant
- Fabrika Tedarik Süresi
- 20 Weeks
- Avalanche Energy Rating Eas
- 4.6 mJ
- Yüzey Montaj
- YES
- Power Max
- 3W
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pulsed Drain Currentmax Idm
- 18A
- Vgsth Max Id
- 2.5V @ 1mA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Formu
- GULL WING
- Number Of Elements
- 2
- Jesd30 Code
- R-PDSO-G8
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode
- ENHANCEMENT MODE
- Ds Breakdown Voltagemin
- 30V
- Rds On Max Id Vgs
- 21.4m Ω @ 9A, 10V
- Current Continuous Drain Id25
- 9A
- Input Capacitance Ciss Max Vds
- 640pF @ 15V
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