SH8K25GZ0TB

Specifications

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

40V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

100pF @ 10V

Fet Feature

Standard

Rds On Max Id Vgs

85m Ω @ 5.2A, 10V

Current Continuous Drain Id25

5.2A Ta

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Vgsth Max Id

2.5V @ 1mA

Transistor Element Material

SILICON

Parça Durumu

Active

Jesd30 Code

R-PDSO-G8

Fabrika Tedarik Süresi

16 Weeks

Avalanche Energy Rating Eas

0.48 mJ

Fet Type

2 N-Channel (Dual)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

8A

Transistor Application

SWITCHING

Power Max

2W Ta

Yüzey Montaj

YES

Terminal Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

40V

Gate Charge Qg Max Vgs

1.7nC @ 5V

Drainsource On Resistancemax

0.085Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Cut Tape (CT)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ