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Rohm Semiconductor

RGWX5TS65EHRC11

Single IGBTs

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Specifications

Collector Emitter Voltage Vceo Max
650 V
Igbt Type
Trench Field Stop
Package Type
TO-247N
Montaj Tipi
Through Hole
Minimum Operating Temperature
- 40 C
Current Collector Pulsed Icm
300 A
Pin Sayısı
3
Test Conditions
400V, 37.5A, 10Ohm, 15V
Kılıf / Paket
TO-247-3
Maximum Collector Emitter Voltage
650 V
Power Dissipation
348W
Tedarikçi Cihaz Paketi
TO-247N
Power Max
348 W
Vceon Max Vge Ic
1.9V @ 15V, 75A
Reverse Recovery Time Trr
100 ns
Channel Type
N
Gate Charge
213 nC
Çalışma Sıcaklığı
-40°C ~ 175°C (TJ)
Continuous Collector Current
132A
Technology
Si
Collectoremitter Saturation Voltage
1.5V
Maks. Çalışma Sıcaklığı
+ 175 C
Td Onoff25c
59ns/243ns
Montaj Stili
Through Hole
Configuration
Single
Currentcollector Ic Max
132 A
Pd Power Dissipation
348 W
Maximum Gate Emitter Voltage
±30V
Voltage Collector Emitter Breakdown Max
650 V
Continuous Collector Current At25 C
132 A
Ürün Durumu
Active
Giriş Tipi
Standard

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