Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Giriş Tipi
- Standard
- Ürün Durumu
- Active
- Voltage Collector Emitter Breakdown Max
- 650 V
- Continuous Collector Current At25 C
- 80 A
- Ambalaj
- Tube
- Pd Power Dissipation
- 214 W
- Maximum Gate Emitter Voltage
- ±30V
- Currentcollector Ic Max
- 80 A
- Montaj Stili
- Through Hole
- Configuration
- Single
- RoHS
- Details
- Td Onoff25c
- 43ns/148ns
- Collectoremitter Saturation Voltage
- 1.5V
- Technology
- Si
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Tube
- Continuous Collector Current
- 80A
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Gate Charge
- 110 nC
- Channel Type
- N
- Reverse Recovery Time Trr
- 86 ns
- Power Dissipation
- 214W
- Tedarikçi Cihaz Paketi
- TO-247N
- Vceon Max Vge Ic
- 1.9V @ 15V, 40A
- Power Max
- 214 W
- Kılıf / Paket
- TO-247-3
- Maximum Collector Emitter Voltage
- 650 V
- Test Conditions
- 400V, 20A, 10Ohm, 15V
- Continuous Collector Current Ic Max
- 160 A
- Fabrika Paket Adedi
- 30
- Current Collector Pulsed Icm
- 160 A
- Minimum Operating Temperature
- - 40 C
- Pin Sayısı
- 3
- Package Type
- TO-247N
- Montaj Tipi
- Through Hole
- Igbt Type
- Trench Field Stop
- Ürün Tipi
- IGBT Transistors
- Collector Emitter Voltage Vceo Max
- 650 V
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