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C3 ChipZentronix
RGW00TS65GC11

ROHM Semiconductor

RGW00TS65GC11

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Fabrika Tedarik Süresi
17 Weeks
Voltage Collector Emitter Breakdown Max
650V
Giriş Tipi
Standard
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Td Onoff25c
52ns/180ns
Switching Energy
1.18mJ (on), 960μJ (off)
Jesd30 Code
R-PSFM-T3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
96A
Configuration
SINGLE
Parça Durumu
Active
Turn Off Timenom Toff
273 ns
Turn On Time
72 ns
Polaritychannel Type
N-CHANNEL
Number Of Elements
1
Vceon Max Vge Ic
1.9V @ 15V, 50A
Power Max
254W
Terminal Sayısı
3
Terminal Pozisyonu
SINGLE
Kılıf / Paket
TO-247-3
Transistor Element Material
SILICON
Çalışma Sıcaklığı
-40°C~175°C TJ
Gate Charge
141nC
Montaj Tipi
Through Hole
Igbt Type
Trench Field Stop
RoHS Durumu
ROHS3 Compliant
Transistor Application
POWER CONTROL
Test Conditions
400V, 50A, 10 Ω, 15V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yüzey Montaj
NO
Current Collector Pulsed Icm
200A

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