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RGTVX6TS65GC11

ROHM Semiconductor

RGTVX6TS65GC11

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Terminal Pozisyonu
SINGLE
Terminal Sayısı
3
Power Max
404W
Vceon Max Vge Ic
1.9V @ 15V, 80A
Kılıf / Paket
TO-247-3
Transistor Element Material
SILICON
Turn On Time
83 ns
Polaritychannel Type
N-CHANNEL
Number Of Elements
1
Gate Charge
171nC
Çalışma Sıcaklığı
-40°C~175°C TJ
Transistor Application
POWER CONTROL
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Through Hole
Igbt Type
Trench Field Stop
Yüzey Montaj
NO
Current Collector Pulsed Icm
320A
Test Conditions
400V, 80A, 10 Ω, 15V
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fabrika Tedarik Süresi
17 Weeks
Voltage Collector Emitter Breakdown Max
650V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Giriş Tipi
Standard
Td Onoff25c
45ns/201ns
Currentcollector Ic Max
144A
Configuration
SINGLE
Parça Durumu
Active
Turn Off Timenom Toff
298 ns
Switching Energy
2.65mJ (on), 1.8mJ (off)
Jesd30 Code
R-PSFM-T3
Nem Hassasiyeti (MSL)
1 (Unlimited)

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