RGTV80TS65DGC11

Specifications

Ürün Tipi

IGBT Transistors

Igbt Type

Trench Field Stop

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo Max

650 V

Continuous Collector Current Ic Max

40 A

Test Conditions

400V, 40A, 10Ohm, 15V

Fabrika Paket Adedi

30

Minimum Operating Temperature

- 40 C

Current Collector Pulsed Icm

160 A

Reverse Recovery Time Trr

101 ns

Kılıf / Paket

TO-247-3

Tedarikçi Cihaz Paketi

TO-247N

Vceon Max Vge Ic

1.9V @ 15V, 40A

Power Max

234 W

Power Dissipation

234W

Msl

MSL 1 - Unlimited

Maks. Çalışma Sıcaklığı

+ 175 C

Technology

Si

Collectoremitter Saturation Voltage

1.5V

Gate Charge

81 nC

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Continuous Collector Current

78A

Paket

Tube

RoHS

Details

Td Onoff25c

39ns/113ns

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Pd Power Dissipation

234 W

Ambalaj

Tube

Switching Energy

1.02mJ (on), 710μJ (off)

Configuration

Single

Montaj Stili

Through Hole

Currentcollector Ic Max

78 A

Ürün Durumu

Active

Continuous Collector Current At25 C

78 A

Voltage Collector Emitter Breakdown Max

650 V

Giriş Tipi

Standard