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RGTH80TS65GC11

ROHM Semiconductor

RGTH80TS65GC11

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Kılıf / Paket
TO-247-3
Transistor Element Material
SILICON
Terminal Pozisyonu
SINGLE
Terminal Sayısı
3
Vceon Max Vge Ic
2.1V @ 15V, 40A
Number Of Elements
1
Polaritychannel Type
N-CHANNEL
Turn On Time
84 ns
Çalışma Sıcaklığı
-40°C~175°C TJ
Gate Charge
79nC
Collectoremitter Saturation Voltage
1.6V
RoHS Durumu
ROHS3 Compliant
Transistor Application
POWER CONTROL
Igbt Type
Trench Field Stop
Collectoremitter Breakdown Voltage
650V
Montaj Tipi
Through Hole
Reach Svhc
Unknown
Current Collector Pulsed Icm
160A
Yüzey Montaj
NO
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
ECCN Kodu
EAR99
Test Conditions
400V, 40A, 10 Ω, 15V
Pin Sayısı
3
Fabrika Tedarik Süresi
17 Weeks
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Giriş Tipi
Standard
Kurşunsuz
Lead Free
Td Onoff25c
34ns/120ns
Max Power Dissipation
234W
Parça Durumu
Active
Turn Off Timenom Toff
194 ns
Configuration
SINGLE
Currentcollector Ic Max
70A
Yayın Yılı
2014
Nem Hassasiyeti (MSL)
1 (Unlimited)

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