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RGTH80TK65DGC11

ROHM Semiconductor

RGTH80TK65DGC11

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Jesd30 Code
R-PSFM-T3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
31A
Configuration
SINGLE WITH BUILT-IN DIODE
Parça Durumu
Active
Turn Off Timenom Toff
194 ns
Td Onoff25c
34ns/120ns
Giriş Tipi
Standard
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Case Connection
ISOLATED
Voltage Collector Emitter Breakdown Max
650V
Fabrika Tedarik Süresi
17 Weeks
Test Conditions
400V, 40A, 10 Ω, 15V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yüzey Montaj
NO
Current Collector Pulsed Icm
160A
Montaj Tipi
Through Hole
Igbt Type
Trench Field Stop
RoHS Durumu
ROHS3 Compliant
Transistor Application
POWER CONTROL
REACH Uyumluluk Kodu
not_compliant
Reverse Recovery Time
58ns
Çalışma Sıcaklığı
-40°C~175°C TJ
Gate Charge
79nC
Turn On Time
84 ns
Polaritychannel Type
N-CHANNEL
Number Of Elements
1
Terminal Pozisyonu
SINGLE
Terminal Sayısı
3
Power Max
66W
Vceon Max Vge Ic
2.1V @ 15V, 40A
Transistor Element Material
SILICON
Kılıf / Paket
TO-3PFM, SC-93-3

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