Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Pd Power Dissipation
- 194 W
- Currentcollector Ic Max
- 58 A
- Configuration
- Single
- Montaj Stili
- Through Hole
- RoHS
- Details
- Td Onoff25c
- 27ns/105ns
- Giriş Tipi
- Standard
- Ürün Durumu
- Active
- Continuous Collector Current At25 C
- 58 A
- Voltage Collector Emitter Breakdown Max
- 650 V
- Test Conditions
- 400V, 30A, 10Ohm, 15V
- Fabrika Paket Adedi
- 600
- Current Collector Pulsed Icm
- 120 A
- Minimum Operating Temperature
- - 40 C
- Montaj Tipi
- Through Hole
- Ürün Tipi
- IGBT Transistors
- Igbt Type
- Trench Field Stop
- Collector Emitter Voltage Vceo Max
- 650 V
- Maks. Çalışma Sıcaklığı
- + 175 C
- Technology
- Si
- Collectoremitter Saturation Voltage
- 2.1 V
- Paket
- Tube
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Gate Charge
- 58 nC
- Reverse Recovery Time Trr
- 58 ns
- Power Max
- 194 W
- Vceon Max Vge Ic
- 2.1V @ 15V, 30A
- Tedarikçi Cihaz Paketi
- TO-247
- Kılıf / Paket
- TO-247-3
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