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RGTH00TS65DGC11

ROHM Semiconductor

RGTH00TS65DGC11

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$5.27
  • 10+ pcs$4.97
  • 100+ pcs$4.69
  • 500+ pcs$4.43

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RoHS

Compliant

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Technical team support

Specifications

Igbt Type
Trench Field Stop
Reach Svhc
Unknown
Montaj Tipi
Through Hole
Collectoremitter Breakdown Voltage
650V
Kurşunsuz Kodu
yes
RoHS Durumu
ROHS3 Compliant
Transistor Application
POWER CONTROL
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Test Conditions
400V, 50A, 10 Ω, 15V
Pin Sayısı
3
Current Collector Pulsed Icm
200A
Number Of Elements
1
Turn On Time
102 ns
Polaritychannel Type
N-CHANNEL
Transistor Element Material
SILICON
Kılıf / Paket
TO-247-3
Vceon Max Vge Ic
2.1V @ 15V, 50A
Power Max
277W
Terminal Sayısı
3
Reverse Recovery Time
54 ns
Element Configuration
Single
Collectoremitter Saturation Voltage
1.6V
Max Collector Current
85A
Gate Charge
94nC
Çalışma Sıcaklığı
-40°C~175°C TJ
Continuous Collector Current
50A
Td Onoff25c
39ns/143ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tube
Parça Durumu
Active
Turn Off Timenom Toff
221 ns
Max Power Dissipation
277W
Yayın Yılı
2014
Collector Emitter Voltage Vceo
650V
Montaj
Through Hole
Fabrika Tedarik Süresi
17 Weeks
Giriş Tipi
Standard
Weight
38.000013g
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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