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Rohm Semiconductor

RGT80TS65DGC13

Single IGBTs

In StockRoHS: Compliant

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Specifications

Continuous Collector Current At25 C
70 A
Maximum Collector Emitter Voltage
650 V
Kılıf / Paket
TO-247-3
Package Type
TO-247GE
Technology
Si
Gate Charge
79 nC
Current Collector Pulsed Icm
120 A
Reverse Recovery Time Trr
236 ns
Continuous Collector Current
70A
Montaj Stili
Through Hole
Vceon Max Vge Ic
2.1V @ 15V, 40A
Maks. Çalışma Sıcaklığı
+ 175 C
Montaj Tipi
Through Hole
Paket
Tube
Power Dissipation
234W
Çalışma Sıcaklığı
-40°C ~ 175°C (TJ)
Power Max
234 W
Collectoremitter Saturation Voltage
1.65V
Currentcollector Ic Max
70 A
Configuration
Single
Ürün Durumu
Active
Maximum Gate Emitter Voltage
±30V
Test Conditions
400V, 40A, 10Ohm, 15V
Minimum Operating Temperature
- 40 C
Giriş Tipi
Standard
Td Onoff25c
34ns/119ns
Igbt Type
Trench Field Stop
Tedarikçi Cihaz Paketi
TO-247G
Collector Emitter Voltage Vceo Max
650 V
Pd Power Dissipation
234 W
Voltage Collector Emitter Breakdown Max
650 V

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