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RGT40NS65DGC9

ROHM Semiconductor

RGT40NS65DGC9

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Currentcollector Ic Max
40A
Power Max
161W
Fabrika Tedarik Süresi
17 Weeks
Jesd30 Code
R-PSIP-T3
Transistor Element Material
SILICON
Test Conditions
400V, 20A, 10 Ω, 15V
Terminal Pozisyonu
SINGLE
Terminal Sayısı
3
Configuration
SINGLE WITH BUILT-IN DIODE
Polaritychannel Type
N-CHANNEL
Yüzey Montaj
NO
Igbt Type
Trench Field Stop
Td Onoff25c
22ns/75ns
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Giriş Tipi
Standard
Voltage Collector Emitter Breakdown Max
650V
Gate Charge
40nC
Current Collector Pulsed Icm
60A
Ambalaj
Tube
Parça Durumu
Active
Reverse Recovery Time
58ns
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-262-3 Long Leads, I2Pak, TO-262AA
Vceon Max Vge Ic
2.1V @ 15V, 20A
Montaj Tipi
Through Hole
Transistor Application
POWER CONTROL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Çalışma Sıcaklığı
-40°C~175°C TJ
Turn Off Timenom Toff
204 ns
Turn On Time
51 ns

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