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C3 ChipZentronix
RGT30NS65DGC9

ROHM Semiconductor

RGT30NS65DGC9

Single IGBTs

In StockRoHS: Compliant

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Power Max
133W
Currentcollector Ic Max
30A
Terminal Pozisyonu
SINGLE
Terminal Sayısı
3
Configuration
SINGLE WITH BUILT-IN DIODE
Fabrika Tedarik Süresi
17 Weeks
Jesd30 Code
R-PSIP-T3
Transistor Element Material
SILICON
Test Conditions
400V, 15A, 10 Ω, 15V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Td Onoff25c
18ns/64ns
Giriş Tipi
Standard
RoHS Durumu
ROHS3 Compliant
Polaritychannel Type
N-CHANNEL
Yüzey Montaj
NO
Igbt Type
Trench Field Stop
Voltage Collector Emitter Breakdown Max
650V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-262-3 Long Leads, I2Pak, TO-262AA
Current Collector Pulsed Icm
45A
Gate Charge
32nC
Parça Durumu
Active
Ambalaj
Tube
Reverse Recovery Time
55ns
Number Of Elements
1
Transistor Application
POWER CONTROL
Vceon Max Vge Ic
2.1V @ 15V, 15A
Montaj Tipi
Through Hole
Turn On Time
40 ns
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Çalışma Sıcaklığı
-40°C~175°C TJ
Turn Off Timenom Toff
204 ns

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