RGT20NL65GTL

Specifications

Collector Emitter Voltage Vceo Max

650 V

Tedarikçi Cihaz Paketi

TO-263AB

Mounting

Surface Mount

Minimum Operating Temperature

- 40 C

Test Conditions

400V, 10A, 10Ohm, 15V

Maximum Gate Emitter Voltage

±30V

Rad Hardened

No

Operating Temperature Min

-40C

Msl

MSL 1 - Unlimited

Ürün Durumu

Active

Configuration

Single

Operating Temperature Max

175C

Channel Type

N

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Pin Sayısı

2 +Tab

Montaj Tipi

Surface Mount

Ürün Tipi

IGBT Transistors

Continuous Collector Current Ic Max

10 A

Montaj Stili

Through Hole

Fabrika Paket Adedi

1000

Current Collector Pulsed Icm

30 A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Collector Current At25 C

20 A

Technology

Si

Pd Power Dissipation

53 W

Voltage Collector Emitter Breakdown Max

650 V

Collector Current Dc

20(A)

Igbt Type

Trench Field Stop

Gate To Emitter Voltage Max

±30(V)

Giriş Tipi

Standard

Td Onoff25c

12ns/32ns

Currentcollector Ic Max

20 A

Power Max

106 W

Collectoremitter Saturation Voltage

1.65V

Operating Temperature Classification

AUTOMOTIVEC

Power Dissipation

106W

Vceon Max Vge Ic

2.1V @ 15V, 10A

Maks. Çalışma Sıcaklığı

+ 175 C

Continuous Collector Current

20A

Gate Charge

22 nC