Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Current Collector Pulsed Icm
- 225 A
- Gate Charge
- 79 nC
- Technology
- Si
- Package Type
- TO-247N
- Continuous Collector Current At25 C
- 114 A
- Maximum Collector Emitter Voltage
- 650 V
- Kılıf / Paket
- TO-247-3
- RoHS
- Details
- Montaj Stili
- Through Hole
- Reverse Recovery Time Trr
- 116 ns
- Continuous Collector Current
- 114A
- Fabrika Paket Adedi
- 30
- Maks. Çalışma Sıcaklığı
- + 175 C
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 2.15V @ 15V, 75A
- Pin Sayısı
- 3
- Ürün Tipi
- IGBT Transistors
- Switching Energy
- 3.44mJ (on), 1.9mJ (off)
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Power Dissipation
- 404W
- Paket
- Tube
- Currentcollector Ic Max
- 114 A
- Collectoremitter Saturation Voltage
- 1.7V
- Channel Type
- N
- Power Max
- 404 W
- Test Conditions
- 400V, 75A, 10Ohm, 15V
- Maximum Gate Emitter Voltage
- ±30V
- Configuration
- Single
- Ürün Durumu
- Active
- Igbt Type
- Trench Field Stop
- Td Onoff25c
- 43ns/113ns
- Minimum Operating Temperature
- - 40 C
- Giriş Tipi
- Standard
- Voltage Collector Emitter Breakdown Max
- 650 V
- Collector Emitter Voltage Vceo Max
- 650 V
- Pd Power Dissipation
- 404 W
- Tedarikçi Cihaz Paketi
- TO-247N
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