Volume pricing
- 1+ pcs$7.53
- 10+ pcs$7.10
- 100+ pcs$6.70
- 500+ pcs$6.32
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Giriş Tipi
- Standard
- Minimum Operating Temperature
- - 40 C
- Td Onoff25c
- 37ns/112ns
- Igbt Type
- Trench Field Stop
- Tedarikçi Cihaz Paketi
- TO-247N
- Pd Power Dissipation
- 272 W
- Collector Emitter Voltage Vceo Max
- 650 V
- Voltage Collector Emitter Breakdown Max
- 650 V
- Power Max
- 272 W
- Collectoremitter Saturation Voltage
- 1.65
- Currentcollector Ic Max
- 73 A
- Part Aliases
- RGS80TS65DHR
- Configuration
- Single
- Msl
- MSL 1 - Unlimited
- Ürün Durumu
- Active
- Qualification
- AEC-Q101
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Test Conditions
- 400V, 40A, 10Ohm, 15V
- Ürün Tipi
- IGBT Transistors
- Vceon Max Vge Ic
- 2.1V @ 15V, 40A
- Montaj Tipi
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Tube
- Power Dissipation
- 272
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Switching Energy
- 1.05mJ (on), 1.03mJ (off)
- Continuous Collector Current At25 C
- 73 A
- Kılıf / Paket
- TO-247-3
- RoHS
- Details
- Technology
- Si
- Current Collector Pulsed Icm
- 120 A
- Gate Charge
- 48 nC
- Ambalaj
- Tube
- Fabrika Paket Adedi
- 450
- Continuous Collector Current
- 73
- Reverse Recovery Time Trr
- 103 ns
- Montaj Stili
- Through Hole
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