Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Maximum Gate Emitter Voltage
- ±30V
- Test Conditions
- 600V, 15A, 10Ohm, 15V
- Configuration
- Single
- Ürün Durumu
- Active
- Currentcollector Ic Max
- 30 A
- Power Max
- 267 W
- Collectoremitter Saturation Voltage
- 1.7V
- Pd Power Dissipation
- 267 W
- Collector Emitter Voltage Vceo Max
- 1.2 kV
- Voltage Collector Emitter Breakdown Max
- 1200 V
- Tedarikçi Cihaz Paketi
- TO-247N
- Igbt Type
- Trench Field Stop
- Giriş Tipi
- Standard
- Minimum Operating Temperature
- - 40 C
- Td Onoff25c
- 30ns/70ns
- Continuous Collector Current
- 30A
- Montaj Stili
- Through Hole
- Fabrika Paket Adedi
- 30
- Gate Charge
- 41 nC
- Current Collector Pulsed Icm
- 45 A
- Ambalaj
- Tube
- RoHS
- Details
- Kılıf / Paket
- TO-247-3
- Maximum Collector Emitter Voltage
- 1200 V
- Continuous Collector Current At25 C
- 30 A
- Package Type
- TO-247N
- Technology
- Si
- Switching Energy
- 740μJ (on), 600μJ (off)
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Paket
- Tube
- Power Dissipation
- 267W
- Pin Sayısı
- 3
- Vceon Max Vge Ic
- 2.1V @ 15V, 15A
- Maks. Çalışma Sıcaklığı
- + 175 C
- Montaj Tipi
- Through Hole
- Ürün Tipi
- IGBT Transistors
- Continuous Collector Current Ic Max
- 15 A
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