RFN10TF6S

Specifications

Diode Type

Standard

Diode Element Material

SILICON

Maks. Çalışma Sıcaklığı

150°C

Fabrika Tedarik Süresi

10 Weeks

Number Of Elements

1

Peak Nonrepetitive Surge Current

100A

Applications

SUPER FAST RECOVERY

Case Connection

ISOLATED

Pin Sayısı

2

Element Configuration

Single

Number Of Phases

1

Max Repetitive Reverse Voltage Vrrm

600V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Operating Temperature Junction

150°C Max

Current Reverse Leakage Vr

10μA @ 600V

Forward Current

10A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2012

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Peak Reverse Current

10μA

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Min. Çalışma Sıcaklığı

-55°C

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Voltage Forward Vf Max If

1.55V @ 10A

Max Reverse Voltage Dc

600V

Average Rectified Current

10A

HTS Kodu

8541.10.00.80

Montaj

Through Hole

Montaj Tipi

Through Hole

Ambalaj

Bulk

Reverse Recovery Time

50 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-220-2