RFN10NS8DTL

Specifications

Ir Reverse Current

0.05 uA

Ürün Tipi

Diodes - General Purpose, Power, Switching

Minimum Operating Temperature

- 55 C

Reverse Recovery Time

40ns

Rev Curr

10(uA)

Peak Rep Rev Volt

800(V)

Package Type

LPDS

Repetitive Peak Reverse Voltage

800V

Fabrika Paket Adedi

1000

Vf Forward Voltage

1.6 V

Max Surge Current

60 A

Recovery Time

20 ns

Vr Reverse Voltage

800 V

Current Reverse Leakage Vr

10 μA @ 800 V

Forward Voltage

2.1@5A(V)

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Part Aliases

RFN10NS8D

Operating Temperature Junction

150°C

Tedarikçi Cihaz Paketi

LPDS

Product Height Mm

4.5(mm)

Diode Type

Standard

Peak Forward Voltage

2.1@5A(V)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rectifier Type

Switching Diode

Peak Reverse Voltage

800 V

Product Depth Mm

9(mm)

Ambalaj

Tape and Reel

Montaj Tipi

Surface Mount

Ürün Durumu

Active

RoHS

Details

Operating Temperature Classification

Military

Voltage Forward Vf Max If

2.1 V @ 5 A

Mounting

Surface Mount

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

2 +Tab

Montaj Stili

SMD/SMT

Voltage Dc Reverse Vr Max

800 V

Operating Temp Range

-55C to 150C

Peak Reverse Current

10(uA)

Maximum Forward Current

10000(mA)