RBR40NS60ATL

Specifications

Current Average Rectified Io Per Diode

20A

Technology

Si

Operating Temperature Junction

150°C

Peak Forward Voltage

0.6(V)

Montaj Stili

SMD/SMT

Operating Temperature Classification

Military

Maximum Forward Current

40000(mA)

Voltage Dc Reverse Vr Max

60 V

Ambalaj

Tape and Reel

Ir Reverse Current

800 uA

Rad Hardened

No

Operating Temp Range

-55C to 150C

Ürün Tipi

Schottky Diodes & Rectifiers

Montaj Tipi

Surface Mount

Vf Forward Voltage

600 mV

Vrrm Repetitive Reverse Voltage

60 V

Temel Ürün No

RBR40

Tedarikçi Cihaz Paketi

LPDS

Minimum Operating Temperature

- 55 C

Package Type

LPDS

Diode Type

Schottky

RoHS

Details

Forward Voltage

0.6(V)

Mounting

Surface Mount

Forward Current

40000(mA)

Peak Reverse Current

800(uA)

Peak Nonrepetitive Surge Current

100(A)

Ifsm Forward Surge Current

100 A

Rectifier Type

Schottky Diode

Peak Rep Rev Volt

60(V)

Current Reverse Leakage Vr

800 μA @ 60 V

Ürün Durumu

Active

Part Aliases

RBR40NS60A

Voltage Forward Vf Max If

600 mV @ 20 A

Fabrika Paket Adedi

1000

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Maks. Çalışma Sıcaklığı

+ 150 C

Rev Curr

800(uA)

Pin Sayısı

2 +Tab

Speed

Fast Recovery =< 500ns, > 200mA (Io)