RBR20BGE40ATL

Specifications

Operating Temperature Junction

150°C

Technology

Si

RoHS

Details

Current Average Rectified Io Per Diode

20A

Ifsm Forward Surge Current

100 A

Montaj Stili

SMD/SMT

Current Reverse Leakage Vr

360 μA @ 40 V

Voltage Dc Reverse Vr Max

40 V

Ambalaj

Cut Tape

Ürün Tipi

Schottky Diodes & Rectifiers

Ir Reverse Current

360 uA

Ürün Durumu

Active

Fabrika Paket Adedi

2500

Montaj Tipi

Surface Mount

Voltage Forward Vf Max If

550 mV @ 10 A

Pin Sayısı

3

Tedarikçi Cihaz Paketi

TO-252GE

Maks. Çalışma Sıcaklığı

+ 150 C

Vf Forward Voltage

550 mV

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vrrm Repetitive Reverse Voltage

40 V

Diode Configuration

1 Pair Common Cathode

If Forward Current

20 A

Number Of Elements Per Chip

2

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Type

Schottky

Configuration

Dual Anode Common Cathode

Package Type

TO-252

Repetitive Peak Reverse Voltage

40V

Vr Reverse Voltage

40 V