RBR10T60ANZC9

Specifications

Technology

Si

RoHS

Details

Operating Temperature Junction

150°C

Paket

Tube

Current Average Rectified Io Per Diode

5A

Montaj Stili

Through Hole

Ifsm Forward Surge Current

50 A

Current Reverse Leakage Vr

200 μA @ 60 V

Ambalaj

Tube

Voltage Dc Reverse Vr Max

60 V

Ir Reverse Current

200 uA

Ürün Durumu

Active

Ürün Tipi

Schottky Diodes & Rectifiers

Montaj Tipi

Through Hole

Fabrika Paket Adedi

50

Part Aliases

RBR10T60ANZ

Voltage Forward Vf Max If

650 mV @ 5 A

Pin Sayısı

3

Vrrm Repetitive Reverse Voltage

60 V

Kılıf / Paket

TO-220-3 Full Pack

Vf Forward Voltage

650 mV

Maks. Çalışma Sıcaklığı

+ 150 C

Temel Ürün No

RBR10

Tedarikçi Cihaz Paketi

TO-220FN

Speed

Fast Recovery =< 500ns, > 200mA (Io)

If Forward Current

10 A

Number Of Elements Per Chip

2

Minimum Operating Temperature

- 55 C

Diode Configuration

1 Pair Common Cathode

Configuration

Dual Anode Common Cathode

Diode Type

Schottky

Vr Reverse Voltage

60 V

Package Type

TO-220FN