RBR10BM40AFHTL

Specifications

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Forward Current

10A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Temperature Junction

150°C Max

Yüzey Montaj

YES

Fabrika Tedarik Süresi

20 Weeks

Number Of Phases

1

Ambalaj

Tape & Reel (TR)

Voltage Dc Reverse Vr Max

40V

Parça Durumu

Active

Terminal Sayısı

2

Current Reverse Leakage Vr

120μA @ 40V

Operating Temperature Max

150°C

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Durumu

ROHS3 Compliant

Seri

Automotive, AEC-Q101

Rep Pk Reverse Voltagemax

40V

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Voltage Forward Vf Max If

620mV @ 5A

Terminal Pozisyonu

SINGLE

Montaj Tipi

Surface Mount

Diode Type

Schottky

Terminal Formu

GULL WING

Output Currentmax

5A

Reverse Currentmax

120μA

Applications

GENERAL PURPOSE

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Additional Feature

HIGH RELIABILITY

Diode Configuration

1 Pair Common Cathode