RBQ30NS65AFHTL

Specifications

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Forward Current

30A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Temperature Junction

150°C Max

Yüzey Montaj

YES

Fabrika Tedarik Süresi

12 Weeks

Ambalaj

Cut Tape (CT)

Voltage Dc Reverse Vr Max

65V

Number Of Phases

1

Parça Durumu

Active

ECCN Kodu

EAR99

Current Reverse Leakage Vr

450μA @ 65V

Terminal Sayısı

2

Operating Temperature Max

150°C

Seri

Automotive, AEC-Q101

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Rep Pk Reverse Voltagemax

65V

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

HTS Kodu

8541.10.00.80

Voltage Forward Vf Max If

690mV @ 15A

Terminal Pozisyonu

SINGLE

Montaj Tipi

Surface Mount

Reverse Recovery Time

16.1ns

Diode Type

Schottky

Terminal Formu

GULL WING

Output Currentmax

15A

Reverse Currentmax

200μA

Applications

GENERAL PURPOSE

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Yayın Yılı

2017

Diode Configuration

1 Pair Common Cathode

Additional Feature

HIGH RELIABILITY