RBQ30NS45AFHTL

Specifications

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Forward Voltage

650mV

Forward Current

30A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Temperature Junction

150°C Max

Maks. Çalışma Sıcaklığı

150°C

Number Of Elements

2

Fabrika Tedarik Süresi

12 Weeks

Max Repetitive Reverse Voltage Vrrm

45V

Yüzey Montaj

YES

Element Configuration

Common Cathode

Terminal Sayısı

2

Current Reverse Leakage Vr

200μA @ 45V

Number Of Phases

1

Ambalaj

Cut Tape (CT)

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Seri

Automotive, AEC-Q101

Montaj Tipi

Surface Mount

Voltage Forward Vf Max If

650mV @ 15A

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Max Forward Surge Current Ifsm

100A

Terminal Formu

GULL WING

Diode Type

Schottky

Reach Svhc

Unknown

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Additional Feature

HIGH RELIABILITY

Diode Configuration

1 Pair Common Cathode

Reverse Currentmax

200μA

Output Currentmax

15A

Applications

GENERAL PURPOSE