RBQ10BM45AFHTL

Specifications

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Forward Current

10A

Operating Temperature Junction

150°C Max

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Fabrika Tedarik Süresi

20 Weeks

Number Of Phases

1

Ambalaj

Cut Tape (CT)

Voltage Dc Reverse Vr Max

45V

Parça Durumu

Active

Terminal Sayısı

2

Current Reverse Leakage Vr

150μA @ 45V

Operating Temperature Max

150°C

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Durumu

ROHS3 Compliant

Seri

Automotive, AEC-Q101

Rep Pk Reverse Voltagemax

45V

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

SINGLE

Voltage Forward Vf Max If

650mV @ 5A

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Diode Type

Schottky

Reverse Currentmax

70μA

Output Currentmax

5A

Applications

GENERAL PURPOSE

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Additional Feature

HIGH RELIABILITY

Diode Configuration

1 Pair Common Cathode

Yayın Yılı

2017