RBQ10BGE65ATL

Specifications

Fabrika Paket Adedi

2500

Voltage Forward Vf Max If

690 mV @ 5 A

Pin Sayısı

2 +Tab

Maks. Çalışma Sıcaklığı

+ 150 C

Güç (Watt)

2W

Kılıf / Paket

Radial

Seri

S

Speed

Fast Recovery =< 500ns, > 200mA (Io)

If Forward Current

10 A

Number Of Elements Per Chip

2

Tolerans

±0.005%

Diode Configuration

2x Common Cathode Pair

Configuration

Dual Common Cathode

Temperature Coefficient

±2ppm/°C

Repetitive Peak Reverse Voltage

65V

Vr Reverse Voltage

65 V

RoHS

Details

Özellikler

Moisture Resistant, Non-Inductive

Mounting

Surface Mount

Paket

Bulk

Ifsm Forward Surge Current

50 A

Peak Nonrepetitive Surge Current

50(A)

Peak Reverse Current

70(uA)

Peak Rep Rev Volt

65(V)

Terminal Sayısı

2

Current Reverse Leakage Vr

70 µA @ 65 V

Rectifier Type

Schottky Diode

Maks. Oturma Yüksekliği

0.413 (10.49mm)

Direnç

39 kOhms

Product Length Mm

6.6(mm)

Ürün Durumu

Active

Montaj Tipi

Surface Mount

Vf Forward Voltage

690 mV

Vrrm Repetitive Reverse Voltage

65 V

Boyut / Ölçü

1.200 L x 0.260 W (30.48mm x 6.60mm)

Diode Type

Schottky

Package Type

DPAK

Technology

Si

Operating Temperature Junction

150°C

Composition

Metal Foil