RB218NS100TL

Specifications

Package Type

LPDS

Ifsm Forward Surge Current

100 A

Ambalaj

Tape and Reel

Peak Nonrepetitive Surge Current

100(A)

Vrrm Repetitive Reverse Voltage

110 V

Product Depth Mm

9(mm)

Rad Hardened

No

Current Average Rectified Io Per Diode

20A

Forward Voltage

0.87@10A(V)

Forward Current

20000(mA)

Operating Temperature Junction

150°C

Rev Curr

7@100V(uA)

Montaj Tipi

Surface Mount

Diode Type

Schottky

Diode Configuration

1 Pair Common Cathode

Configuration

Dual Common Cathode

Technology

Si

Vf Forward Voltage

870 mV

Voltage Dc Reverse Vr Max

100 V

Ürün Durumu

Active

Maks. Çalışma Sıcaklığı

+ 150 C

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Pin Sayısı

2 +Tab

Peak Rep Rev Volt

110(V)

Mounting

Surface Mount

Voltage Forward Vf Max If

870 mV @ 10 A

Tedarikçi Cihaz Paketi

LPDS

Operating Temp Range

-55C to 150C

Peak Reverse Current

7@100V(uA)

Product Height Mm

4.5(mm)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Temel Ürün No

RB218

Rectifier Type

Schottky Diode

Montaj Stili

SMD/SMT

Current Reverse Leakage Vr

7 μA @ 100 V

Peak Forward Voltage

0.87@10A(V)

If Forward Current

20 A

Maximum Forward Current

20000(mA)

Operating Temperature Classification

Military

Ir Reverse Current

7 uA