RB098BGE-60TL

Specifications

Tedarikçi Cihaz Paketi

TO-252GE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Average Rectified Io Per Diode

6A

Montaj Tipi

Surface Mount

Configuration

Single

Package Type

TO-252

Technology

Si

Ifsm Forward Surge Current

50 A

If Forward Current

6 A

Pin Sayısı

3

Diode Configuration

1 Pair Common Cathode

Vf Forward Voltage

830 mV

Vr Reverse Voltage

60 V

Vrrm Repetitive Reverse Voltage

60 V

RoHS

Details

Maks. Çalışma Sıcaklığı

+ 150 C

Repetitive Peak Reverse Voltage

60V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

60 V

Operating Temperature Junction

150°C

Voltage Forward Vf Max If

830 mV @ 3 A

Number Of Elements Per Chip

2

Diode Type

Schottky

Ir Reverse Current

1.5 uA

Montaj Stili

SMD/SMT

Ürün Durumu

Active

Current Reverse Leakage Vr

1.5 μA @ 60 V

Ambalaj

Cut Tape

Ürün Tipi

Schottky Diodes & Rectifiers

Fabrika Paket Adedi

2500