RB088T100NZC9

Specifications

Maximum Forward Current

10000(mA)

Ürün Tipi

Schottky Diodes & Rectifiers

Peak Nonrepetitive Surge Current

100(A)

Ürün Durumu

Active

Ir Reverse Current

5 uA

Mounting

Through Hole

Voltage Forward Vf Max If

870 mV @ 5 A

Operating Temperature Junction

150°C

Rad Hardened

No

Forward Current

10000(mA)

Product Height Mm

15(mm)

Maks. Çalışma Sıcaklığı

+ 150 C

Vf Forward Voltage

870 mV

Vr Reverse Voltage

100 V

Pin Sayısı

3 +Tab

Diode Configuration

1 Pair Common Cathode

Peak Forward Voltage

0.87(V)

Configuration

Dual Common Cathode

Technology

Si

If Forward Current

10 A

Ifsm Forward Surge Current

100 A

Current Average Rectified Io Per Diode

10A

Tedarikçi Cihaz Paketi

TO-220FN

Ambalaj

Rail/Tube

Fabrika Paket Adedi

1000

Peak Rep Rev Volt

110(V)

Current Reverse Leakage Vr

5 μA @ 100 V

Product Depth Mm

4.5(mm)

Montaj Stili

Through Hole

Diode Type

Schottky

Forward Voltage

0.87(V)

Operating Temperature Classification

Military

Peak Reverse Current

5(uA)

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

100 V

Rectifier Type

Schottky Diode

Rev Curr

5(uA)

Vrrm Repetitive Reverse Voltage

110 V

RoHS

Details

Part Aliases

RB088T100NZ