RB088NS-30TL

Specifications

Operating Temperature Junction

150°C

Tedarikçi Cihaz Paketi

LPDS

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage Forward Vf Max If

720 mV @ 5 A

Current Average Rectified Io Per Diode

10A

Diode Type

Schottky

Technology

Si

Ifsm Forward Surge Current

50 A

Ir Reverse Current

3 uA

If Forward Current

10 A

Configuration

Single

Montaj Tipi

Surface Mount

Diode Configuration

1 Pair Common Cathode

Montaj Stili

SMD/SMT

Ürün Durumu

Active

Vrrm Repetitive Reverse Voltage

35 V

Vf Forward Voltage

720 mV

Temel Ürün No

RB088

Current Reverse Leakage Vr

3 μA @ 30 V

Maks. Çalışma Sıcaklığı

+ 150 C

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

30 V