RB088NS100FHTL

Specifications

Yayın Yılı

2017

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Fabrika Tedarik Süresi

12 Weeks

Voltage Dc Reverse Vr Max

100V

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G2

Diode Element Material

SILICON

Maks. Çalışma Sıcaklığı

150°C

Number Of Elements

2

Element Configuration

Common Cathode

Reach Svhc

No SVHC

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Forward Surge Current Ifsm

100A

Terminal Formu

GULL WING

Diode Configuration

1 Pair Common Cathode

Output Currentmax

5A

Seri

Automotive, AEC-Q101

Parça Durumu

Active

Terminal Sayısı

2

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Number Of Phases

1

Max Repetitive Reverse Voltage Vrrm

110V

Current Reverse Leakage Vr

5μA @ 100V

Ambalaj

Cut Tape (CT)

Reverse Currentmax

5μA

Pin Sayısı

3

Additional Feature

HIGH RELIABILITY

Voltage Forward Vf Max If

870mV @ 5A

Applications

GENERAL PURPOSE

Operating Temperature Junction

150°C Max

Forward Current

10A

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Diode Type

Schottky

Reverse Recovery Time

11.8ns

Forward Voltage

870mV