RB088BGE-40TL

Specifications

Current Average Rectified Io Per Diode

5A

Tedarikçi Cihaz Paketi

TO-252GE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Diode Configuration

1 Pair Common Cathode

Pin Sayısı

3

Montaj Tipi

Surface Mount

Configuration

Single

Ifsm Forward Surge Current

50 A

If Forward Current

10 A

Technology

Si

Package Type

TO-252

Maks. Çalışma Sıcaklığı

+ 150 C

Vf Forward Voltage

770 mV

Vr Reverse Voltage

40 V

Vrrm Repetitive Reverse Voltage

45 V

RoHS

Details

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

40 V

Repetitive Peak Reverse Voltage

45V

Voltage Forward Vf Max If

770 mV @ 5 A

Number Of Elements Per Chip

2

Operating Temperature Junction

150°C

Montaj Stili

SMD/SMT

Ürün Durumu

Active

Diode Type

Schottky

Ir Reverse Current

3 uA

Current Reverse Leakage Vr

3 μA @ 40 V

Ambalaj

Cut Tape

Ürün Tipi

Schottky Diodes & Rectifiers

Fabrika Paket Adedi

2500