RB088BGE100TL

Specifications

Operating Temperature Junction

150°C

Voltage Forward Vf Max If

870 mV @ 5 A

Number Of Elements Per Chip

2

Diode Type

Schottky

Ir Reverse Current

5 uA

Montaj Stili

SMD/SMT

Ürün Durumu

Active

Current Reverse Leakage Vr

5 μA @ 100 V

Ambalaj

Cut Tape

Ürün Tipi

Schottky Diodes & Rectifiers

Fabrika Paket Adedi

2500

Tedarikçi Cihaz Paketi

TO-252GE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Average Rectified Io Per Diode

5A

If Forward Current

10 A

Ifsm Forward Surge Current

50 A

Technology

Si

Package Type

TO-252

Montaj Tipi

Surface Mount

Configuration

Single

Pin Sayısı

3

Diode Configuration

1 Pair Common Cathode

Vrrm Repetitive Reverse Voltage

100 V

Vr Reverse Voltage

100 V

Vf Forward Voltage

870 mV

RoHS

Details

Maks. Çalışma Sıcaklığı

+ 150 C

Repetitive Peak Reverse Voltage

100V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

100 V