QS8K2TR

Specifications

Transistor Element Material

SILICON

Max Power Dissipation

1.25W

Turn Off Delay Time

29 ns

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Vgsth Max Id

1.5V @ 1mA

Fet Type

2 N-Channel (Dual)

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.077Ohm

Fall Time Typ

13 ns

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Pin Sayısı

8

Drain To Source Voltage Vdss

30V

Gate To Source Voltage Vgs

12V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Channels

2

Temel Parça No

*K2

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-SMD, Flat Lead

Number Of Elements

2

Turn On Delay Time

8 ns

Drain To Source Breakdown Voltage

30V

Parça Durumu

Not For New Designs

Terminal Sayısı

8

Kurşunsuz

Lead Free

Rise Time

12ns

Montaj Tipi

Surface Mount

Pin Sayısı

8

Gate Charge Qg Max Vgs

4.6nC @ 4.5V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Input Capacitance Ciss Max Vds

285pF @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

3.5A

Transistor Application

SWITCHING

Rds On Max Id Vgs

54m Ω @ 3.5A, 4.5V