Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 550mW
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 30 ns
- Drain Currentmax Abs Id
- 4A
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- 150°C TJ
- Drainsource On Resistancemax
- 0.075Ohm
- Fall Time Typ
- 7 ns
- Kurşunsuz Kodu
- yes
- Number Of Channels
- 1
- Ambalaj
- Tape & Reel (TR)
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 45V
- Turn On Delay Time
- 9 ns
- Drain To Source Breakdown Voltage
- 45V
- Kılıf / Paket
- 8-SMD, Flat Lead
- Number Of Elements
- 2
- JESD-609 Kodu
- e2
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- ECCN Kodu
- EAR99
- Gate Charge Qg Max Vgs
- 5.4nC @ 5V
- Pin Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Rise Time
- 25ns
- Terminal Sayısı
- 8
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 4A
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