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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 550mW
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Kurşunsuz Kodu
- yes
- Drainsource On Resistancemax
- 0.039Ohm
- Çalışma Sıcaklığı
- 150°C TJ
- Drain Currentmax Abs Id
- 6A
- Ds Breakdown Voltagemin
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Standard
- Drain To Source Voltage Vdss
- 30V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status
- Not Qualified
- Ambalaj
- Cut Tape (CT)
- Kılıf / Paket
- 8-SMD, Flat Lead
- Number Of Elements
- 2
- JESD-609 Kodu
- e2
- Parça Durumu
- Active
- Terminal Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Power Max
- 550mW
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Pin Sayısı
- 8
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- Tepe Reflow Süresi (maks. sn)
- 10
- Pulsed Drain Currentmax Idm
- 18A
- Input Capacitance Ciss Max Vds
- 390pF @ 10V
- Continuous Drain Current Id
- 6A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 28m Ω @ 6A, 10V
- Yayın Yılı
- 2012
- Jesd30 Code
- R-PDSO-F8
- Fabrika Tedarik Süresi
- 20 Weeks
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