QS8K11TCR

Specifications

Number Of Elements

2

Kılıf / Paket

8-SMD, Flat Lead

Power Max

1.5W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Power Dissipationmax Abs

1.5W

Parça Durumu

Active

Terminal Sayısı

8

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

3.3nC @ 5V

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

12A

Input Capacitance Ciss Max Vds

180pF @ 10V

Rds On Max Id Vgs

50m Ω @ 3.5A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yüzey Montaj

YES

Current Continuous Drain Id25

3.5A

Jesd30 Code

R-PDSO-F8

Fabrika Tedarik Süresi

20 Weeks

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.5V @ 1mA

Drainsource On Resistancemax

0.07Ohm

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

30V

Drain Currentmax Abs Id

3.5A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

30V

Ambalaj

Cut Tape (CT)