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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 39m Ω @ 5A, 10V
- Yayın Yılı
- 2014
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 5A
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 10
- Input Capacitance Ciss Max Vds
- 1100pF @ 10V
- Fabrika Tedarik Süresi
- 10 Weeks
- Turn On Delay Time
- 9 ns
- Number Of Elements
- 2
- JESD-609 Kodu
- e2
- Kılıf / Paket
- 8-SMD, Flat Lead
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Parça Durumu
- Not For New Designs
- Terminal Sayısı
- 8
- Rise Time
- 40ns
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 5A
- Ds Breakdown Voltagemin
- 30V
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- 150°C TJ
- Drainsource On Resistancemax
- 0.039Ohm
- Fall Time Typ
- 55 ns
- Ambalaj
- Tape & Reel (TR)
- Number Of Channels
- 2
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 30V
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Max Power Dissipation
- 600mW
- Transistor Element Material
- SILICON
- Fet Type
- 2 P-Channel (Dual)
- Vgsth Max Id
- 2.5V @ 1mA
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