Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 300 ns
- Operating Mode
- ENHANCEMENT MODE
- Montaj
- Surface Mount
- Fet Type
- 2 P-Channel (Dual)
- Vgsth Max Id
- 1V @ 1mA
- Max Power Dissipation
- 550mW
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 12V
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 10V
- Fet Feature
- Logic Level Gate, 1.5V Drive
- Ambalaj
- Tape & Reel (TR)
- Number Of Channels
- 2
- Kurşunsuz Kodu
- yes
- Drainsource On Resistancemax
- 0.036Ohm
- Fall Time Typ
- 180 ns
- Çalışma Sıcaklığı
- 150°C TJ
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 4A
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Rise Time
- 60ns
- Gate Charge Qg Max Vgs
- 20nC @ 4.5V
- Pin Sayısı
- 8
- ECCN Kodu
- EAR99
- Number Of Elements
- 2
- Element Configuration
- Dual
- Kılıf / Paket
- 8-SMD, Flat Lead
- Drain To Source Breakdown Voltage
- -12V
- Turn On Delay Time
- 10 ns
- Fabrika Tedarik Süresi
- 20 Weeks
- Input Capacitance Ciss Max Vds
- 1940pF @ 6V
- Rds On Max Id Vgs
- 36m Ω @ 4A, 4.5V
- Yayın Yılı
- 2015
- Continuous Drain Current Id
- 4A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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