QS8J1TR

Specifications

Kılıf / Paket

8-SMD, Flat Lead

JESD-609 Kodu

e2

Number Of Elements

2

Turn On Delay Time

12 ns

Drain To Source Breakdown Voltage

-12V

Rise Time

75ns

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Sayısı

8

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Terminal Kaplaması

TIN COPPER

ECCN Kodu

EAR99

Pin Sayısı

8

Gate Charge Qg Max Vgs

31nC @ 4.5V

Tepe Reflow Süresi (maks. sn)

10

Input Capacitance Ciss Max Vds

2450pF @ 6V

Transistor Application

SWITCHING

Continuous Drain Current Id

4.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Rds On Max Id Vgs

29m Ω @ 4.5A, 4.5V

Fabrika Tedarik Süresi

52 Weeks

Transistor Element Material

SILICON

Max Power Dissipation

1.25W

Power Dissipation

1.5W

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

390 ns

Vgsth Max Id

1V @ 1mA

Fet Type

2 P-Channel (Dual)

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.029Ohm

Fall Time Typ

215 ns

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

10V