Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Cut Tape (CT)
- Fet Feature
- Logic Level Gate
- Drain To Source Voltage Vdss
- 12V
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ds Breakdown Voltagemin
- 12V
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- 150°C TJ
- Vgsth Max Id
- 1V @ 1mA
- Direnç
- 15mOhm
- Fet Type
- 2 P-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Surface Mount
- REACH Uyumluluk Kodu
- not_compliant
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1.25W
- Fabrika Tedarik Süresi
- 20 Weeks
- Continuous Drain Current Id
- 5.5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 22m Ω @ 5.5A, 4.5V
- Yayın Yılı
- 2014
- Input Capacitance Ciss Max Vds
- 6300pF @ 6V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 60nC @ 4.5V
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Power Max
- 1.25W
- Kılıf / Paket
- 8-SMD, Flat Lead
- Number Of Elements
- 2
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