Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 550mW
- Transistor Element Material
- SILICON
- Fet Type
- 2 P-Channel (Dual)
- Vgsth Max Id
- 1V @ 1mA
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Ds Breakdown Voltagemin
- 12V
- Çalışma Sıcaklığı
- 150°C TJ
- Drainsource On Resistancemax
- 0.029Ohm
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tape & Reel (TR)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 12V
- Fet Feature
- Logic Level Gate, 1.5V Drive
- JESD-609 Kodu
- e2
- Number Of Elements
- 2
- Kılıf / Paket
- 8-SMD, Flat Lead
- Terminal Kaplaması
- TIN COPPER
- ECCN Kodu
- EAR99
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 40nC @ 4.5V
- Power Max
- 550mW
- Montaj Tipi
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Kurşunsuz
- Lead Free
- Parça Durumu
- Not For New Designs
- Terminal Sayısı
- 8
- Yayın Yılı
- 2015
- Rds On Max Id Vgs
- 29m Ω @ 4.5A, 4.5V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 4.5A
- Tepe Reflow Süresi (maks. sn)
- 10
- Input Capacitance Ciss Max Vds
- 4200pF @ 6V
- Fabrika Tedarik Süresi
- 10 Weeks
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