QS6M4TR

Specifications

Gate Charge Qg Max Vgs

1.6nC @ 4.5V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Kurşunsuz Kodu

yes

Yayın Yılı

2006

Continuous Drain Current Id

1.5A

Gate To Source Voltage Vgs

12V

Fall Time Typ

12 ns

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Turn Off Delay Time

45 ns

Fet Type

N and P-Channel

Element Configuration

Dual

Drain To Source Voltage Vdss

30V 20V

Operating Mode

ENHANCEMENT MODE

Akım Değeri

1.5A

Drainsource On Resistancemax

0.245Ohm

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

230m Ω @ 1.5A, 4.5V

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

12ns

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Threshold Voltage

1.5V

Input Capacitance Ciss Max Vds

80pF @ 10V

Parça Durumu

Active

Pin Sayısı

6

Terminal Sayısı

6

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Drain To Source Breakdown Voltage

-20V

JESD-609 Kodu

e1

HTS Kodu

8541.29.00.95

Max Power Dissipation

1.25W

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

1.25W

Temel Parça No

*M4