QS6M3TR

Specifications

Fet Type

N and P-Channel

Turn Off Delay Time

45 ns

Akım Değeri

1.5A

Rds On Max Id Vgs

230m Ω @ 1.5A, 4.5V

Tepe Reflow Sıcaklığı (°C)

260

Yayın Yılı

2006

Continuous Drain Current Id

1.5A

Kurşunsuz Kodu

yes

Fall Time Typ

12 ns

Max Power Dissipation

900mW

JESD-609 Kodu

e1

Çalışma Sıcaklığı

150°C TJ

Dual Supply Voltage

30V

Terminal Formu

GULL WING

Number Of Elements

2

Fabrika Tedarik Süresi

25 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

80pF @ 10V

Nominal Vgs

1.5 V

Threshold Voltage

1.5V

Transistor Element Material

SILICON

Terminal Sayısı

6

Element Configuration

Dual

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V 20V

Gate Charge Qg Max Vgs

1.6nC @ 4.5V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Gate To Source Voltage Vgs

12V

Drain To Source Breakdown Voltage

-20V

Terminal

SMD/SMT

Power Dissipation

1.25W

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Vgsth Max Id

1.5V @ 1mA

Temel Parça No

*M3

Montaj Tipi

Surface Mount