QS6K21FRATR

Specifications

Rds On Drainsource Resistance

300 mOhms

Fabrika Paket Adedi

3000

Pd Power Dissipation

1.25 W

Continuous Drain Current Id

1A

Vgs Th Gatesource Threshold Voltage

1.5 V

Transistor Type

2 N-Channel

Qualification

AEC-Q101

Fet Type

2 N-Channel (Dual)

Technology

Si

Qg Gate Charge

1.5 nC

Vgs Gatesource Voltage

- 12 V, + 12 V

Rds On Max Id Vgs

420mOhm @ 1A, 4.5V

Typical Turnon Delay Time

6 ns

Input Capacitance Ciss Max Vds

10V

Maks. Çalışma Sıcaklığı

+ 150 C

Configuration

Dual

Çalışma Sıcaklığı

150°C (TJ)

Temel Ürün No

QS6K21

Id Continuous Drain Current

1 A

Ürün Tipi

MOSFET

Vds Drainsource Breakdown Voltage

45 V

Channel Type

Dual N

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Tedarikçi Cihaz Paketi

TSMT6 (SC-95)

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Minimum Operating Temperature

- 55 C

Typical Turnoff Delay Time

16 ns

Transistor Polarity

N-Channel, NPN

Power Max

950mW (Ta)

Drain To Source Voltage Vdss

45V

Montaj Stili

SMD/SMT

Rise Time

8 ns

Birim Ağırlık

0.000353 oz

Fet Feature

Standard

Ürün Durumu

Active

Channel Mode

Enhancement

Number Of Channels

2 Channel

Seri

Automotive, AEC-Q101

Ambalaj

MouseReel

Power Dissipation

1.25W