QS6K1FRATR

Specifications

Continuous Drain Current

1(A)

Power Max

900mW (Tc)

Drain To Source Voltage Vdss

30V

Typical Turnoff Delay Time

15 ns

Transistor Polarity

N-Channel, NPN

Gate Charge Qg Max Vgs

2.4nC @ 4.5V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Tedarikçi Cihaz Paketi

TSMT6 (SC-95)

Minimum Operating Temperature

- 55 C

Vgsth Max Id

1.5V @ 1mA

Part Aliases

QS6K1FRA

Current Continuous Drain Id25

1A (Ta)

RoHS

Details

Montaj Tipi

Surface Mount

Seri

Automotive, AEC-Q101

Gatesource Voltage Max

12(V)

Ambalaj

Tape and Reel

Power Dissipation

1.25(W)

Ürün Durumu

Active

Pin Sayısı

6

Channel Mode

Enhancement

Number Of Channels

2 Channel

Montaj Stili

SMD/SMT

Tip

Power MOSFET

Rise Time

7 ns

Fet Feature

Logic Level Gate, 2.5V Drive

Birim Ağırlık

0.000353 oz

Drainsource Onvolt

30(V)

Vgs Gatesource Voltage

- 12 V, + 12 V

Rds On Max Id Vgs

238mOhm @ 1A, 4.5V

Mounting

Surface Mount

Qualification

AEC-Q101

Transistor Type

2 N-Channel

Fet Type

2 N-Channel (Dual)

Qg Gate Charge

1.7 nC

Technology

Si

Pd Power Dissipation

1.25 W

Fabrika Paket Adedi

3000

Vgs Th Gatesource Threshold Voltage

500 mV

Operating Temp Range

-55C to 150C