QS6J3TR

Specifications

Akım Değeri

-1.5A

Rds On Max Id Vgs

215m Ω @ 1.5A, 4.5V

Tepe Reflow Sıcaklığı (°C)

260

Fet Type

2 P-Channel (Dual)

Turn Off Delay Time

45 ns

Yayın Yılı

2004

Continuous Drain Current Id

1.5A

Kurşunsuz Kodu

yes

Fall Time Typ

12 ns

Terminal Formu

GULL WING

Dual Supply Voltage

-20V

Number Of Elements

2

Max Power Dissipation

1.25W

JESD-609 Kodu

e1

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

270pF @ 10V

Nominal Vgs

-2 V

Threshold Voltage

-2V

Transistor Element Material

SILICON

Terminal Sayısı

6

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Element Configuration

Dual

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

20V

Gate To Source Voltage Vgs

12V

Gate Charge Qg Max Vgs

3nC @ 4.5V

Turn On Delay Time

10 ns

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Montaj

Surface Mount

Vgsth Max Id

2V @ 1mA

Temel Parça No

*J3

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

10

Pin Sayısı

6

Drain To Source Breakdown Voltage

-20V

Terminal

SMD/SMT

Power Dissipation

1.25W